FDD8880 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* r DS(ON) = 9m Ω , V GS = 10V, ID = 35A
* r DS(ON) = 12m Ω , V GS = 4.5V, I D = 35A
* High performance trench technology for extremely low r DS(ON)
* Low.

Application

* DC/DC converters
* High power and current handling capability D D G G S D-PAK TO-252 (TO-252) S MOSFET .

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching .

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